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Wide Band Gap Semiconductor Group

Directors: Hongxing Jiang, Jingyu Lin
Address: 116 Cardwell Hall
Phone number: 785-532-1627 (Jiang), 785-532-1614 (Lin), 785-532-2846 (fax)
Web site: http://www.phys.ksu.edu/area/GaNgroup/index.html

The Wide Band Gap Semiconductor Group is a component of the physics department. The group, founded in the early 1990s, dedicates its research to the study of III-nitride wide bandgap semiconductors. These semiconductors are important in the construction of devices that emit electromagnetic radiation in the blue and ultra-violet spectral regions. They are also used in electronic devices capable of operation in high-power and high-temperature conditions.

The group is developing smart synthetic methods to grow III-nitride nano-structures and materials. They are also working on new architectures that will lay the foundation for achieving photonic integrated circuits that are active in the UV/blue/green/spectral region. These technologies are expected to reshape the next decade's communications, signal and image processing, energy conversion and storage and disease detection, which could all have influence in the world's economy as well as in our daily lives.